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| SD1429-03 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features * * * * * 470 MHz 12.5 VOLTS POUT = 15.0 WATTS GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC Ptot TJ TSTG Parameter Value 36 16 36 4.0 3.4 37.5 +200 -65 to +150 Unit V V V V W A C C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 4.6 C/W 12-05-2002 SD1429-03 STATIC 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCES BVCEO BVEBO ICES HFE IC = 50 mA IC = 50 mA IC = 10 mA VCE = 15 V VCE = 5.0 V Test Conditions Min. VBE = 0 mA IB = 0 V IC = 0 mA VBE = 0 mA IC = 500 A 36 16 4.0 --20 Value Typ. ----------- Max. ------5 200 Unit V V V mA --- DYNAMIC Symbol POUT GP COB f = 470 MHz f = 470 MHz f = 1 MHz Test Conditions Min. PIN = 2.65 W PIN = 2.65 W VCB = 12.0 V VCE = 12.5 V VCE = 12.5 V 15 7.5 --- Value Typ. ------- Max. ----50.0 Unit W dB pf IMPEDANCE DATA FREQ 450 MHz 470 MHz 512 MHz POUT = 15 W VCE = 12.5V ZIN() ) 2.9 - j 0.2 2.4 - j 0.9 0.3 +j 0.4 ZCL() ) 1.0 + j 1.9 0.90 + j 2.3 0.90 +j 2.3 12-05-2002 SD1429-03 PACKAGE MECHANICAL DATA 12-05-2002 |
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